document number: 81009 for technical questions, contact: emittertechsupport@vishay.com www.vishay.com rev. 1.6, 29-jun-09 1 high power infrared emitting diode, 940 nm, gaalas/gaas TSAL6100 vishay semiconductors description TSAL6100 is an infrared, 940 nm emitting diode in gaalas/gaas technology with high radiant power molded in a blue-gray plastic package. features ? package type: leaded ? package form: t-1? ? dimensions (in mm): ? 5 ? peak wavelength: p = 940 nm ? high reliability ? high radiant power ? high radiant intensity ? angle of half intensity: ? = 10 ? low forward voltage ? suitable for high pulse current operation ? good spectral matching with si photodetectors ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec ? halogen-free according to iec 61249-2-21 definition applications ? infrared remote co ntrol units with high power reqirements ? free air transmission systems ? infrared source for optical counters and card readers ? ir source for smoke detectors note test conditions see table ?basic characteristics? note moq: minimum order quantity note t amb = 25 c, unless otherwise specified 94 8 3 8 9 product summary component i e (mw/sr) ? (deg) p (nm) t r (ns) TSAL6100 130 10 940 800 ordering information ordering code packaging remarks package form TSAL6100 bulk moq: 4000 pcs, 4000 pcs/bulk t-1? absolute maximum ratings parameter test condition symbol value unit reverse voltage v r 5v forward current i f 100 ma peak forward current t p /t = 0.5, t p = 100 s i fm 200 ma surge forward current t p = 100 s i fsm 1.5 a power dissipation p v 160 mw junction temperature t j 100 c operating temperature range t amb - 40 to + 85 c storage temperature range t stg - 40 to + 100 c soldering temperature t 5 s, 2 mm from case t sd 260 c thermal resistance junction/ambient j-std-051, leads 7 mm soldered on pcb r thja 230 k/w
www.vishay.com for technical questions, contact: emittertechsupport@vishay.com document number: 81009 2 rev. 1.6, 29-jun-09 TSAL6100 vishay semiconductors high power infrared emitting diode, 940 nm, gaalas/gaas fig. 1 - power dissipation limit vs. ambient temperatur e fig. 2 - forward current limit vs. ambient temperature note t amb = 25 c, unless otherwise specified 0 20 40 60 8 0 100 120 140 160 1 8 0 010203040506070 8 0 90 100 21211 t am b - am b ient temperat u re (c) p v - po w er dissipation (m w ) r thja = 230 k/ w 0 20 40 60 8 0 100 120 0 10 203040 506070 8 0 90 100 t am b - am b ient temperat u re (c) 21212 i f - for w ard c u rrent (ma) r thja = 230 k/ w basic characteristics parameter test condition symbol min. typ. max. unit forward voltage i f = 100 ma, t p = 20 ms v f 1.35 1.6 v i f = 1 a, t p = 100 s v f 2.6 3 v temperature coefficient of v f i f = 1 ma tk vf - 1.8 mv/k reverse current v r = 5 v i r 10 a junction capacitance v r = 0 v, f = 1 mhz, e = 0 c j 25 pf radiant intensity i f = 100 ma, t p = 20 ms i e 80 130 400 mw/sr i f = 1 a, t p = 100 s i e 650 1000 mw/sr radiant power i f = 100 ma, t p = 20 ms e 35 mw temperature coefficient of e i f = 20 ma tk e - 0.6 %/k angle of half intensity ? 10 deg peak wavelength i f = 100 ma p 940 nm spectral bandwidth i f = 100 ma ? 50 nm temperature coefficient of p i f = 100 ma tk p 0.2 nm/k rise time i f = 100 ma t r 800 ns fall time i f = 100 ma t f 800 ns virtual source diameter met hod: 63 % encircled energy d 3.7 mm
document number: 81009 for technical questions, contact: emittertechsupport@vishay.com www.vishay.com rev. 1.6, 29-jun-09 3 TSAL6100 high power infrared emitting diode, 940 nm, gaalas/gaas vishay semiconductors basic characteristics t amb = 25 c, unless otherwise specified fig. 3 - pulse forward current vs. pulse duration fig. 4 - forward current vs. forward voltage fig. 5 - radiant intensity vs. forward current fig. 6 - radiant power vs. forward current fig. 7 - rel. radiant intensity/power vs. ambient temperature fig. 8 - relative radiant power vs. wavelength t p - p u lse d u ration (ms) 96 119 8 7 10 0 10 1 10 1 10 -1 10 -1 10 0 10 2 10 -2 i - for w ard c u rrent (a) f t p /t = 0.01 i fsm = 1 a (single p u lse) 0.05 0.1 0.5 1.0 v f - for w ard v oltage ( v ) 13600 10 1 10 0 10 2 10 3 10 4 t p = 100 s t p /t = 0.001 0 i f - for w ard c u rrent (ma) 4 3 2 1 1443 8 10 3 10 1 10 2 10 4 10 0 0.1 1 10 1000 100 i f - for w ard c u rrent (ma) i - radiant intensity (m w /sr) e - radiant po w er (m w ) e i f - for w ard c u rrent (ma) 13602 10 3 10 1 10 2 10 4 10 0 0.1 1 10 1000 100 - 10 10 50 0 100 0 0.4 0. 8 1.2 1.6 i e rel ; 140 94 7993 i f = 20 ma e rel t am b - am b ient temperat u re (c) 8 90 0 0.25 0.5 0.75 1.0 1.25 - w a v elength (nm) 14291 - relati v e radiant po w er e rel i f = 100 ma 990 940
www.vishay.com for technical questions, contact: emittertechsupport@vishay.com document number: 81009 4 rev. 1.6, 29-jun-09 TSAL6100 vishay semiconductors high power infrared emitting diode, 940 nm, gaalas/gaas fig. 9 - relative radiant intensity vs. angular displacement package dimensions in millimeters 0.4 0.2 0 i e rel - relati v e radiant intensity 159 8 9 0.6 0.9 0. 8 0 30 10 20 40 50 60 70 8 0 0.7 1.0 ? - ang u lar displacement 35.2 0.55 ? 5 0.15 area not plane technical dra w ings according to di n specifications 6.544-5259.0 8 -4 iss u e: 3; 19.05.09 14436 < 0.7 2.54 nom. 8 .7 0.3 a c 1 min. (4.4) 0.5 + 0.15 - 0.05 ? 5. 8 0.15 7.7 0.15 0.6 + 0.2 - 0.1 r2.49 (sphere) 0.5 + 0.15 - 0.05
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